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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2437 DESCRIPTION *With TO-3 package *High voltage,high speed switching *High reliability APPLICATIONS *Switching regulators *DC-DC convertor *Solid state relay *General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 450 400 7 7 2 100 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=0.1mA ;IC=0 IC=7A; IB=1.4A IC=7A; IB=1.4A VCB=450V; IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V 10 MIN 400 450 7 2SC2437 TYP. MAX UNIT V V V 1.5 1.2 1.0 0.1 V V mA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A; IB1=-IB2=1.4A RL=30;PW=20s;Duty2% 1.5 3.0 1.5 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2437 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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